v rrm = 400 v - 600 v i f = 35 a features ? high surge capability do-5 package ? types from 400 to 600 v v rrm ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol unit repetitive peak reverse voltage v rrm v rms reverse voltage v rms v dc blocking voltage v dc v silicon standard recover y diode maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) 400 600 420 600 500 400 conditions 1n1188 (r) 1N1189 (r) 1n1190 (r) 500 350 280 1n1188 thru 1n1190r 2. reverse polarity (r): stud is anode. dc blocking voltage v dc v continuous forward current i f a operating temperature t j c storage temperature t stg c parameter symbol unit diode forward voltage a ma thermal characteristics thermal resistance, junction - case r thjc c/w 0.25 35 35 35 595 595 595 600 1.2 1.2 -55 to 150 10 500 400 10 1n1190 (r) 1.2 10 10 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 1n1188 (r) 1N1189 (r) 0.25 0.25 v r = 50 v, t j = 140 c 10 10 a v t c = 25 c, t p = 8.3 ms t c 140 c conditions v r = 50 v, t j = 25 c i f = 35 a, t j = 25 c reverse current i r v f electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 1
1n1188 thru 1n1190r www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. 1n1188 thru 1n1190r do- 5 (do-203ab) j k g f a e d p n b c m inches millimeters min max min max a 1/4 ?28 unf b 0.669 0.687 17.19 17.44 c ----- 0.794 ----- 20.16 d ----- 1.020 ----- 25.91 e 0.422 0.453 10.72 11.50 f 0.115 0.200 2.93 5.08 g ----- 0.460 ----- 11.68 j ----- 0.280 ----- 7.00 k 0.236 ----- 6.00 ----- m ----- 0.589 ----- 14.96 n ----- 0.063 ----- 1.60 p 0.140 0.175 3.56 4.45 www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 3
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